The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 1996

Filed:

Sep. 01, 1994
Applicant:
Inventors:

Naoto Miyashita, Yokohama, JP;

Koichi Takahashi, Kawasaki, JP;

Mitsutoshi Koyama, Tokyo, JP;

Shinji Nunotani, Yokohama, JP;

Satoshi Yanagiya, Kawasaki, JP;

Yoshiro Baba, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437225 ;
Abstract

A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.


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