Mitsuru Soma

Title: Mitsuru Soma: Innovator in Semiconductor Technology

Introduction

Mitsuru Soma is a prominent inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His innovative work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

One of Mitsuru Soma's latest patents is a semiconductor device with a silicon capacitor. In this invention, a silicon nitride film serves as a dielectric film on the top face of a lower electrode of a capacitive element. This design prevents the removal of part of the silicon nitride film during the peeling of photoresist, thereby maintaining the capacitance value and enhancing breakdown voltage characteristics. Another notable patent is for a semiconductor device and method of manufacturing the same. This invention involves forming isolation regions in the substrate and epitaxial layer to create multiple element formation regions. By strategically placing a second P-type buried diffusion layer, the lateral diffusion width of the first P-type buried diffusion layer is reduced, allowing for a more compact isolation region.

Career Highlights

Mitsuru Soma has worked with notable companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Mitsuru has collaborated with talented individuals, including Hirotsugu Hata and Yoshimasa Amatatsu. These collaborations have further enriched his work and led to advancements in semiconductor technology.

Conclusion

Mitsuru Soma's contributions to semiconductor technology through his innovative patents demonstrate his commitment to enhancing device performance and reliability. His work continues to influence the field and inspire future innovations.