The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Apr. 07, 2010
Reiki Fujimori, Ojuya, JP;
Mitsuru Soma, Higashi Matsuyama, JP;
Reiki Fujimori, Ojuya, JP;
Mitsuru Soma, Higashi Matsuyama, JP;
SANYO Electric Co., Ltd., Moriguchi-shi, JP;
SANYO Semiconductor Co., Ltd., Ora-gun, JP;
Abstract
In a conventional semiconductor device, part of a dielectric film of a capacitive element is removed when photoresist is peeled off, and this causes problems of variation in capacitance value of the capacitive element and deterioration of breakdown voltage characteristics. In a semiconductor device according to the present invention, a silicon nitride film serving as a dielectric film is formed on the top face of a lower electrode of a capacitive element, and an upper electrode is formed on the top face of the silicon nitride film. The upper electrode is formed of a laminated structure having a silicon film and a polysilicon film protecting the silicon nitride film. This structure prevents part of the silicon nitride film from being removed when, for example, photoresist is peeled off, thereby preventing variation in capacitance value of the capacitive element and deterioration of the breakdown voltage characteristics.