The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Mar. 17, 2011
Mitsuru Soma, Saitama, JP;
Hirotsugu Hata, Gunma, JP;
Yoshimasa Amatatsu, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
In the substrate and the epitaxial layer, isolation regions are formed to divide the substrate and the epitaxial layer into a plurality of element formation regions. Each of the isolation regions is formed by connecting first and second P type buried diffusion layers with a P type diffusion layer. By disposing the second P type buried diffusion layer between the first P type buried diffusion layer and the P type diffusion layer, a lateral diffusion width of the first P type buried diffusion layer is reduced. This structure allows a formation region of the isolation region to be reduced in size.