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For the Inventor, By the Inventor

Itami, Japan

Mitsunori Kobayashi

USPTO Granted Patents = 20

Average Co-Inventor Count = 3.6

ph-index = 13

Forward Citations = 522(Granted Patents)


Location History:

  • Osaka, JP (1985)
  • Hyogo, JP (1994 - 1999)
  • Itami, JP (1979 - 2004)

Company Filing History:

goldMedal20 out of 10,239 
 
Sumitomo Electric Industries, Limited
 patents

Years Active: 1979-2004

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20 patents (USPTO):Explore Patents
1. 6783867 - Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same (2004-08-31),
2. 5998043 - Member for semiconductor device using an aluminum nitride substrate (1999-12-07),
3. 5990548 - Plate type member for semiconductor device package and package (1999-11-23),
4. 5915162 - Coated cutting tool and a process for the production of the same (1999-06-22),
5. 5914181 - Coated cemented carbide member (1999-06-22),
6. 5908884 - Radiation shielding material and producing method thereof (1999-06-01),
7. 5643658 - Coated cemented carbide member (1997-07-01),
8. 5624766 - Cemented carbide and coated cemented carbide for cutting tool (1997-04-29),
9. 5503912 - Ultra-thin film laminate (1996-04-02),
10. 5478634 - Ultra-thin film laminate (1995-12-26),
11. 5370944 - Diamond-coated hard material and a process for the production thereof (1994-12-06),
12. 5296008 - Method for manufacturing a cutting tool insert made of a silicon nitride (1994-03-22),
13. 5171723 - Tool comprised of a silicon nitride sintered body (1992-12-15),
14. 4755399 - Process for the production of a cutting tool (1988-07-05),
15. 4643620 - Coated hard metal tool (1987-02-17),

Title: Mitsunori Kobayashi: Innovator in Semiconductor Technology

Introduction: Mitsunori Kobayashi, based in Itami, Japan, is a prominent inventor with a remarkable portfolio of 20 patents. He has made significant contributions to the field of semiconductor technology, showcasing his expertise and innovative spirit.

Latest Patents: Among his latest patents is a member for a semiconductor device utilizing an aluminum nitride (AlN) substrate material. This invention describes a highly reliable member for a semiconductor device characterized by a high melting point metallizing layer, primarily composed of metals such as tungsten (W) and molybdenum (Mo). An intervening metal layer, consisting mainly of nickel (Ni), copper (Cu), and iron (Fe), is also included, which has a melting point of not greater than 1,000°C. This innovative configuration allows for a conductor layer primarily made of copper to be directly bonded to the intervening metal layer without the need for a solder material layer. The manufacturing process involves post-fire or co-fire metallization techniques on the aluminum nitride substrate.

Career Highlights: Mitsunori Kobayashi is affiliated with Sumitomo Electric Industries, Limited, where he has leveraged his expertise to drive advancements in semiconductor applications. His work not only enhances device reliability but also contributes significantly to the evolution of semiconductor manufacturing processes.

Collaborations: Throughout his career, Kobayashi has collaborated with renowned colleagues, including Toshio Nomura and Yoshihiko Doi. These partnerships have fostered innovation and facilitated the development of pioneering semiconductor technologies that set new standards in the industry.

Conclusion: Mitsunori Kobayashi's contributions to semiconductor technology, illustrated through his extensive patent portfolio, reflect his innovative approach and commitment to excellence. His latest inventions pave the way for improved device performance and reliability, making him a notable figure in the field of semiconductor research and development.

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