Sumitomo Electric Industries, Limited

Mitsunori Kobayashi

Toshio Nomura

Yoshihiko Doi

Katsuya Uchino

Hideki Moriguchi

Kazuo Yamagata

Masuo Chudo

Hirohiko Nakata

Akio Hara

Makoto Setoyama

Yoshikatsu Mori

Akira Sasame

Motoyuki Tanaka

Kazutaka Sasaki

Hiroshi Fujii

Akira Nakayama

Yasuhisa Hashimoto

Naoya Omori

Nobuyuki Kitagawa

Masaaki Tobioka

Toshio Kawamura

Hisanori Ohara

Takaharu Yamamoto

Akira Fukui

Takashi Yoshioka

Kouichi Takashima

Yoshiki Maeda

Toshihisa Adachi

Yasuhiro Saito

Tosiaki Nakamata

Takashi Yoshida

Seiki Hiraoka

A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000&deg; C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.

Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same

A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000.degree. C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

Member for semiconductor device using an aluminum nitride substrate

A plate type member of a Cu--W and/or Mo alloy can be bonded to a ceramic member or the like to form a semiconductor device package without problems, because the degree of warping of the plate type member during a heating step in its fabrication is suppressed. In the plate type member consisting of a Cu--W and/or Mo alloy, including a small amount of alkaline earth metal impurity the difference between alkaline earth metal contents in upper and lower halves of the member along the thickness direction is not more than 10 ppm, or delete 'an alkaline earth' preferably not more than 5 ppm relative to the content of W and/or Mo. This plate type member is manufactured by reducing the alkaline earth metal content in W and/or Mo raw material powder, or standing a skeleton vertically upright on a refractory plate for carryiing out Cu infiltration, and performing homogeneous heating and cooling replace during the manufacturing thereby preventing maldistribution of the alkaline earth metal.

Plate type member for semiconductor device package and package

A coated cemented carbide member includes a cemented carbide base material containing a binder metal of at least one iron family metal and a hard phase, and a coating layer provided on the surface of the cemented carbide base material. The hard phase contains at least one metal component selected from carbides, nitrides, carbo-nitrides and carbonic nitrides of Zr and/or Hf and WC. A layer consisting of only WC and an, iron family metal or a binder phase enriched layer or a low hardness layer is provided on an outermost surface of each insert edge portion of the cemented carbide base material. The coating layer is a single or multiple layer consisting of at least one metal component selected from carbides, nitrides, carbo-nitrides, oxides and borides of metals belonging to the groups IVB, VB and VIB of the periodic table. Due to this structure, it is possible to improve chipping resistance with no deterioration of wear resistance in the coated cemented carbide member to be used, for example, as a cutting tool.

Coated cemented carbide member

Coated cutting tool and a process for the production of the same

Tungsten powder which is a material of high radiation absorptivity is dispersed into unvulcanized fluoro rubber in advance so that the mixture is vulcanized and molded. As the powder of material of high radiation absorptivity, powder having an F.s.s.s. particle size not larger than 50 .mu.m is used. Further, in the case where a mixture of powder having an F.s.s.s. particle size in a range of from 5 .mu.m to 50 .mu.m, and powder having an F.s.s.s. particle size in a range of from 0.5 .mu.m, to 5 .mu.m, is used as the powder of material of high radiation absorptivity, the powder of material of high radiation absorptivity has good tensile strength, good extensibility and more excellent radiation shielding ability, when the weight of the powder having a particle size in a range of from 4 .mu.m to 100 .mu.m is in a range of from 60% by weight to 95% by weight, and the weight of the powder having a particle size smaller than 4 .mu.m is in a range of from 5% by weight to 40% by weight. Both the powder and the vulcanized rubber containing carbon powder have electrical conductivity, so that electromagnetic wave shielding ability is added. In addition, the vulcanized rubber is vulcanized fluoro rubber which is excellent in heat resistance and chemical resistance.

Radiation shielding material and producing method thereof

A coated cemented carbide member includes a cemented carbide base material containing a binder metal of at least one iron family metal and a hard phase, and a coating layer provided on the surface of the cemented carbide base material. The hard phase contains at least one metal component selected from carbides, nitrides, carbo-nitrides and carbonic nitrides of Zr and/or Hf and WC. A layer consisting of only WC and an iron family metal or a binder phase enriched layer or a low hardness layer is provided on an outermost surface of each insert edge portion of the cemented carbide base material. The coating layer is a single or multiple layer consisting of at least one metal component selected from carbides, nitrides, carbo-nitrides, oxides and borides of metals belonging to the groups IVB, VB and VIB of the periodic table. Due to this structure, it is possible to improve chipping resistance with no deterioration of wear resistance in the coated cemented carbide member to be used, for example, as a cutting tool.

Cemented carbide and coated cemented carbide for cutting tool

A coating film which can sufficiently improve the wear resistance of a cutting tool or a wear-resistant tool and which reveals excellent qualities as a wear-resistant or protective film for an electric or electronic part or a sliding or machine part. Such a coating film is in the form of an ultra-thin film laminate comprising at least one nitride or carbonitride of at least one element selected from the group consisting of the elements in the groups IVa, Va and VIa in the periodic table and Al and B and having a cubic crystal structure and having mainly metallic bonding properties, and at least one compound having a crystal structure other than the cubic crystal structure at normal temperature and normal pressure and under equilibrium state and having mainly covalent bonding properties, the at least one nitride or carbonitride and the compound being alternately laminated in the form of layers, each layer of the compound having a thickness of 0.2-50 nm, the laminate having a cubic crystalline X-ray diffraction pattern as a whole.

Ultra-thin film laminate

Diamond-coated hard material and a process for the production thereof

A tool or tool insert is formed of a silicon nitride sintered body which contains silicon nitride as well as a sintering aid and is sintered under a pressurized atmosphere. Freely grown .beta.-Si.sub.3 N.sub.4 including .beta.'-SIALON is removed from its sintering surface by steps other than grinding. A tool of a surface-coated silicon nitride sintered body is formed by coating the surface of a base material, which is formed in a manner similar to the above, with a layer of carbide of Ti or the like having a thickness of 0.1 to 10 .mu.m and/or a layer of Al.sub.2 O.sub.3 having a thickness of 0.4 to 10 .mu.m. Tools or inserts formed by a silicon nitride sintered body and the same tools provided with a surface coating have an excellent wear resistance as well as toughness and can be manufactured at a low cost since grinding is avoided.

Method for manufacturing a cutting tool insert made of a silicon nitride

A tool comprised of a silicon nitride sintered body which is excellent in toughness as well as wear resistance can be provided in an economical manner. The novel feature of the tool is that the silicon nitride crystal grains comprise 50 to 90% by volume of hexagonal pillar crystals having a minor axis of at most 1.0 .mu.m and 5 to 30% by volume of hexagonal pillar or columnar crystals having a minor axis of at least 1.5 .mu.m. As the silicon nitride starting powder, there is preferably used a mixture of at least two silicon nitride powders prepared by the imide decomposition method, direct metallic silicon nitriding method and silica reducing method.

Tool comprised of a silicon nitride sintered body

A process for producing a cutting tool having a rake face and flank face which intersect to form a cutting edge, which cutting tool comprises a substrate consisting of a sintered hard metal and a coating film provided thereon consisting of a material with a higher hardness than the substrate, which method involves subjecting the substrate to a coating treatment and honing treatment in such a manner that the coating film near the cutting edge has such a thickness that the thickness continuously increases in directions away from the cutting edge along both the rake face and the flank face from a minimum value, including zero, at the cutting edge, such that the thickness of the coating at the rake face reaches a maximum thickness at a first distance from the cutting edge and the thickness at the flank face reaches a maximum thickness at a second distance from the cutting edge, wherein the first distance is greater than the second distance.

Process for the production of a cutting tool

A cutting insert having excellent toughness as well as wear resistance is provided comprising a substrate consisting of a sintered hard metal or alloy such as cemented carbides and a coating film provided thereon consisting of a material having a higher hardness than the substrate, characterized in that the coating film near the cutting edge is continuously made thinner or removed toward both the rake face and flank face.

Coated hard metal tool

Growing community of inventors

Itami, Japan

Mitsunori Kobayashi