Tokyo, Japan

Mitsuhiro Sugiyama

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Semiconductor Photodetectors. Top assignee: Nec Corporation. Active years: 1992-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuhiro Sugiyama. Retrieved from https://idiyas.com/inventor/mitsuhiro-sugiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 10

Forward Citations = 254(Granted Patents)


Company Filing History:


Years Active: 1992-2001

Loading Chart...
Areas of Expertise:
Photodetector
Semiconductor
Fabrication
Optical Wave-Guide
Monocrystalline
Silicon-Based
Optical Fiber
SOI Structure
Bipolar Transistor
Insulating Isolation
Active Regions
Dummy Regions
17 patents (USPTO):Explore Patents

Title: Mitsuhiro Sugiyama: Innovator in Semiconductor Technology

Introduction

Mitsuhiro Sugiyama is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on enhancing the efficiency and performance of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor photo-detector with a square-shaped optical wave-guide. This innovative device boasts high quantum efficiency due to its effective coupling with incident beams and operates at higher frequencies due to a reduced area of the PN junction. In this design, reflection layers are deposited on both parallel surfaces of the square-shaped wave-guide, while light absorption layers are applied to at least one pair of remaining surfaces. Another notable patent is a method for fabricating a photodetector. This invention addresses the issue of fluctuating avalanche breakdown voltage in photodetectors by utilizing a N.sup.+ --Si buried layer and a N--Si epitaxial layer formed on a P--Si substrate. The process involves creating a cavity in the N--Si layer, growing a SiO.sub.2 layer, and selectively forming various layers to enhance the device's performance.

Career Highlights

Mitsuhiro Sugiyama is currently associated with NEC Corporation, a leading company in the technology sector. His work at NEC has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Sugiyama has collaborated with notable colleagues, including Tsutomu Tashiro and Hisashi Takemura. These collaborations have fostered innovation and have been instrumental in the development of cutting-edge technologies.

Conclusion

Mitsuhiro Sugiyama's contributions to semiconductor technology are noteworthy, with a focus on improving device efficiency and performance. His innovative patents and collaborations highlight his role as a key figure in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…