The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 1997

Filed:

Sep. 11, 1996
Applicant:
Inventor:

Mitsuhiro Sugiyama, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438404 ; 438691 ;
Abstract

Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.


Find Patent Forward Citations

Sugiyama, Mitsuhiro. (1997). Semiconductor device and method for making the same (U.S. Patent No. 5633190). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5633190

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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