The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Sep. 22, 1997
Applicant:
Inventor:
Mitsuhiro Sugiyama, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B / ;
U.S. Cl.
CPC ...
385129 ; 385130 ; 757186 ; 757431 ;
Abstract
An optical waveguide layer in a semiconductor photodetector includes a first interface in contact directly with a first insulation layer and a second interface in contact directly with a second insulation layer, wherein each of the first and second insulation layers is much lower in refractive index than any parts of the optical waveguide layer so that a light being propagated through the optical waveguide layer reflects at the first and second interfaces without any permeation into the first and second insulation layers.
Sugiyama, Mitsuhiro. (1999). Silicon-based semiconductor photodetector with an improved thin optical (U.S. Patent No. 5991487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5991487
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile