Higashiyamato, Japan

Misuzu Kanai


Average Co-Inventor Count = 6.2

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Machida, JP (2003)
  • Higashiyamato, JP (2003 - 2004)

Company Filing History:


Years Active: 2003-2004

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5 patents (USPTO):Explore Patents

Title: Misuzu Kanai: Innovator in Semiconductor Technology

Introduction

Misuzu Kanai is a prominent inventor based in Higashiyamato, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on improving the reliability and efficiency of integrated semiconductor devices.

Latest Patents

One of her latest patents is a method of forming a semiconductor device with a capacitor that includes a polycrystalline tantalum oxide film dielectric. This innovation enhances the reliability of integrated semiconductor devices and allows for a higher degree of integration without compromising the accumulated electric charge of each information storage capacity element. The device features a DRAM with memory cells, each comprising an information storage capacity element connected in series to a memory cell selection MISFET formed on a semiconductor substrate. The lower electrode is made of a ruthenium film oriented in a specific plane, while the capacity insulating film is derived from thermally treated amorphous tantalum oxide.

Another notable patent is for a semiconductor integrated circuit device and its manufacturing method. This device includes a memory cell with a memory cell selecting MISFET and an information storage capacitor connected in series. The lower electrode is made of a conductive material containing ruthenium dioxide, and the capacitor insulator is composed of crystalline tantalum pentoxide. This design secures the capacitance required for advanced DRAM memory cells.

Career Highlights

Misuzu Kanai is currently employed at Hitachi, Ltd., where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the capabilities of memory devices, particularly in the context of DRAM technology.

Collaborations

She has collaborated with notable coworkers, including Yasuhiro Sugawara and Naruhiko Nakanishi, contributing to various projects that enhance semiconductor device performance.

Conclusion

Misuzu Kanai's contributions to semiconductor technology have established her as a leading inventor in her field. Her innovative patents reflect her commitment to advancing technology and improving device reliability.

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