The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Oct. 14, 1998
Naruhiko Nakanishi, Hachioji, JP;
Nobuyoshi Kobayashi, Kawagoe, JP;
Yuzuru Ohji, Tokyo, JP;
Sinpei Iijima, Akishima, JP;
Yasuhiro Sugawara, Akishima, JP;
Misuzu Kanai, Machida, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode , a capacitor insulator and an upper electrode , wherein the lower electrode is made of a conductive material containing ruthenium dioxide (RuO ) as principle ingredient and the capacitor insulator is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.