The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Dec. 19, 2000
Yasuhiro Sugawara, Sendai, JP;
Shinpei Iijima, Akishima, JP;
Yuzuru Oji, Hinode, JP;
Naruhiko Nakanishi, Hachioji, JP;
Misuzu Kanai, Higashiyamato, JP;
Masahiko Hiratani, Akishima, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate and having a lower electrode a capacity insulating film and an upper electrode The lower electrode is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.