Hitachi, Ltd.

Misuzu Kanai

Yasuhiro Sugawara

Naruhiko Nakanishi

Shinpei Iijima

Yuzuru Ohji

Nobuyoshi Kobayashi

Masahiko Hiratani

Yuzuru Oji

Sinpei Iijima

Takuya Fukuda

Hideharu Yahata

Ryouichi Furukawa

An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate and having a lower electrode , a capacity insulating film and an upper electrode . The lower electrode is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric

A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode a capacitor insulator and an upper electrode wherein the lower electrode is made of a conductive material containing ruthenium dioxide (RuO ) as principle ingredient and the capacitor insulator is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Semiconductor integrated circuit device and method of manufacturing the same

A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode , a capacitor insulator and an upper electrode , wherein the lower electrode is made of a conductive material containing ruthenium dioxide (RuO ) as principle ingredient and the capacitor insulator is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator

Capacitors are stretched over a plurality of memory cells in the direction of a bit line in order to effectively utilize spaces between adjacent cells. In addition, by creating a cubic structure of each capacitor by adoption of a self-matching technique, the structure can be utilized more effectively. As a result, it is possible to assure a sufficient capacitor capacitance in spite of a limitation imposed by the fabrication technology and obtain an assurance of sufficient space between cells in a shrunk area of a memory cell accompanying high-scale integration and miniaturization of a semiconductor device.

Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate

An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate and having a lower electrode a capacity insulating film and an upper electrode The lower electrode is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Growing community of inventors

Higashiyamato, Japan

Misuzu Kanai