Ming-Yuan Huang

Title: The Innovations of Ming-Yuan Huang

Introduction

Ming-Yuan Huang is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on the development and fabrication of advanced semiconductor devices.

Latest Patents

Ming-Yuan Huang's latest patents include a semiconductor device and a fabrication method thereof. This semiconductor device features a semiconductor substrate that includes a memory array region and a peripheral circuit region. It also has a first active region and a second active region in the peripheral circuit region, along with a recessed gate on the memory array region. The gate comprises a first gate dielectric layer with a specific thickness and a second gate dielectric layer on the peripheral circuit region with varying thicknesses.

Another notable patent is for a semiconductor memory device and its fabrication method. This method involves forming a pair of neighboring trench capacitors in a substrate. An insulating layer with connecting structures is created on the substrate, which is electrically connected to the trench capacitors. An active layer is then formed on the insulating layer, covering the connecting structures, followed by the formation of gate structures that connect to the trench capacitors.

Career Highlights

Ming-Yuan Huang is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

Ming-Yuan has collaborated with notable coworkers such as Shian-Jyh Lin and Jar-Ming Ho, further enhancing the innovative efforts within his team.

Conclusion

Ming-Yuan Huang's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing the field. His patents reflect a commitment to developing cutting-edge solutions that impact the industry significantly.