The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Dec. 05, 2007
Chien-li Cheng, Taoyuan County, TW;
Shian-jyh Lin, Taoyuan County, TW;
Ming-yuan Huang, Taoyuan County, TW;
Chien-Li Cheng, Taoyuan County, TW;
Shian-Jyh Lin, Taoyuan County, TW;
Ming-Yuan Huang, Taoyuan County, TW;
Nanya Technology Corporation, Kueishan, Taoyuan, TW;
Abstract
A method for fabricating a semiconductor memory device. A pair of neighboring trench capacitors is formed in a substrate. An insulating layer having a pair of connecting structures therein is formed on the substrate, in which the pair of connecting structures is electrically connected to the pair of neighboring trench capacitors. An active layer is formed on the insulating layer between the pair of connecting structures so as to cover the pair of connecting structures. A pair of gate structures is formed on the active layer to electrically connect to the pair of trench capacitors. A semiconductor memory device is also disclosed.