The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Feb. 12, 2007
Ming-yuan Huang, Yun-Lin Hsien, TW;
Jar-ming Ho, Taipei, TW;
Ming-Yuan Huang, Yun-Lin Hsien, TW;
Jar-Ming Ho, Taipei, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A method of fabricating gate trench utilizing pad pullback technology is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad layer is provided. Trench capacitors are formed in a memory array region of the semiconductor substrate. Each of the trench capacitors has a trench top oxide (TTO) that extrudes from a main surface of the semiconductor substrate. The pad layer is recessed from its top and covered with a polysilicon layer. Isolation trenches are formed in the substrate and then filled with photoresist. The TTO is then stripped. The pad layer that is not covered by the photoresist is pulled back to define the gate trench.