The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Dec. 28, 2007
Shian-jyh Lin, Taoyuan County, TW;
Yu-pi Lee, Taoyuan County, TW;
Ming-yuan Huang, Taoyuan County, TW;
Jar-ming Ho, Taoyuan County, TW;
Shun-fu Chen, Taoyuan County, TW;
Tse-chuan Kuo, Taoyuan County, TW;
Shian-Jyh Lin, Taoyuan County, TW;
Yu-Pi Lee, Taoyuan County, TW;
Ming-Yuan Huang, Taoyuan County, TW;
Jar-Ming Ho, Taoyuan County, TW;
Shun-Fu Chen, Taoyuan County, TW;
Tse-Chuan Kuo, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a memory array region and a peripheral circuit region; a first active region and a second active region in the peripheral circuit region; a recessed gate disposed on the memory array region, comprising a first gate dielectric layer on the semiconductor substrate, wherein the first gate dielectric layer has a first thickness; and a second gate dielectric layer on the peripheral circuit region, wherein the second gate dielectric layer on the first active layer has a second thickness, and the second gate dielectric layer on the second active layer has a third thickness.