Ming-Yong Jian

Title: The Innovations of Ming-Yong Jian

Introduction

Ming-Yong Jian is a notable inventor based in Chiayi County, Taiwan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative devices that enhance electronic performance.

Latest Patents

Ming-Yong Jian holds a patent for a lateral diffused metal-oxide-semiconductor device. This invention includes a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first and third doped regions have a first conductive type, while the second doped region has a second conductive type. The racetrack-shaped layout of the second doped region is strategically placed within the first doped region, featuring a long axis. The third doped region is positioned within the second doped region, and the gate structure is located on the first and second doped regions adjacent to the third doped region. The contact metal is situated on the first doped region, extending along the long axis and maintaining contact with the first doped region.

Career Highlights

Ming-Yong Jian is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further his research and development efforts in advanced semiconductor devices.

Collaborations

Ming-Yong Jian has collaborated with notable colleagues, including An-Hung Lin and Hong-Ze Lin. Their teamwork has contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Ming-Yong Jian's contributions to the field of semiconductor technology are noteworthy. His patent for the lateral diffused metal-oxide-semiconductor device exemplifies his innovative spirit and dedication to advancing electronic performance.