United Microelectronics Corp.

Ming-Yong Jian

Chun-Wei Chen

Hong-Ze Lin

Wei-Shan Liao

Bo-Jui Huang

An-Hung Lin

Kun-Yi Chou

Ting-Zhou Yan

The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.

Lateral diffused metal-oxide-semiconductor device

Growing community of inventors

Chiayi County, Taiwan

Ming-Yong Jian