The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jan. 02, 2012
An-hung Lin, New Taipei, TW;
Hong-ze Lin, Hsinchu, TW;
Bo-jui Huang, Hsinchu, TW;
Wei-shan Liao, Yunlin County, TW;
Ting-zhou Yan, Kaohsiung, TW;
Kun-yi Chou, New Taipei, TW;
Chun-wei Chen, Hsinchu, TW;
Ming-yong Jian, Chiayi County, TW;
An-Hung Lin, New Taipei, TW;
Hong-Ze Lin, Hsinchu, TW;
Bo-Jui Huang, Hsinchu, TW;
Wei-Shan Liao, Yunlin County, TW;
Ting-Zhou Yan, Kaohsiung, TW;
Kun-Yi Chou, New Taipei, TW;
Chun-Wei Chen, Hsinchu, TW;
Ming-Yong Jian, Chiayi County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.