This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: The Innovative Contributions of Ming Shao
Introduction
Ming Shao is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory device technology. His innovative approach has led to the development of a unique method for forming gate structures in three-dimensional memory devices.
Latest Patents
Ming Shao holds a patent for a method titled "Method for forming gate structure of three-dimensional memory device." This patent outlines a comprehensive process that includes forming an alternating dielectric stack on a substrate, creating multiple slits that penetrate the stack, and removing sacrificial layers to form trenches. The method further details the formation of conductive layers and isolation layers to ensure the integrity of the device.
Career Highlights
Ming Shao is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this leading technology company has positioned him as a key player in advancing memory device innovations. His expertise and dedication have contributed to the company's reputation in the industry.
Collaborations
Ming Shao collaborates with talented colleagues such as Qiang Xu and Zhiliang Xia. Together, they work on various projects that push the boundaries of memory technology.
Conclusion
Ming Shao's contributions to the field of memory devices exemplify the spirit of innovation. His patented methods and collaborative efforts continue to shape the future of technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile