Hubei, China

Ming Shao


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Ming Shao

Introduction

Ming Shao is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory device technology. His innovative approach has led to the development of a unique method for forming gate structures in three-dimensional memory devices.

Latest Patents

Ming Shao holds a patent for a method titled "Method for forming gate structure of three-dimensional memory device." This patent outlines a comprehensive process that includes forming an alternating dielectric stack on a substrate, creating multiple slits that penetrate the stack, and removing sacrificial layers to form trenches. The method further details the formation of conductive layers and isolation layers to ensure the integrity of the device.

Career Highlights

Ming Shao is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this leading technology company has positioned him as a key player in advancing memory device innovations. His expertise and dedication have contributed to the company's reputation in the industry.

Collaborations

Ming Shao collaborates with talented colleagues such as Qiang Xu and Zhiliang Xia. Together, they work on various projects that push the boundaries of memory technology.

Conclusion

Ming Shao's contributions to the field of memory devices exemplify the spirit of innovation. His patented methods and collaborative efforts continue to shape the future of technology.

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