Taichung, Taiwan

Ming-Jeng Huang


Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2006-2010

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3 patents (USPTO):Explore Patents

Title: The Innovations of Ming-Jeng Huang

Introduction

Ming-Jeng Huang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of phase change memory devices. With a total of 3 patents to his name, Huang's work has had a notable impact on the industry.

Latest Patents

Huang's latest patents include innovative designs for phase change memory devices and methods for fabricating them. One exemplary patent describes a phase change memory device that features a substrate with a first electrode and a first dielectric layer. This device incorporates a plurality of cup-shaped heating electrodes and insulating layers, which enhance its functionality. Another patent focuses on a photosensitive device that includes an insulator layer with multiple photoreceiving regions. This device is designed to optimize the performance of photoreceiving regions while maintaining a high dielectric layer surface.

Career Highlights

Throughout his career, Ming-Jeng Huang has worked with notable organizations such as Powerchip Semiconductor Corporation and the Industrial Technology Research Institute. His experience in these companies has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Huang has collaborated with esteemed colleagues, including Chen-Chiu Hsue and Jen-Chi Chuang. These partnerships have fostered a creative environment that has led to innovative solutions in their respective fields.

Conclusion

Ming-Jeng Huang's contributions to the field of semiconductor technology are significant and impactful. His patents reflect a commitment to innovation and excellence in the industry. As he continues to develop new technologies, his work will undoubtedly influence the future of memory devices and photonic applications.

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