The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Sep. 01, 2006
Applicants:
Ming-jeng Huang, Taichung, TW;
Chen-chiu Hsue, Hsinchu, TW;
Inventors:
Ming-Jeng Huang, Taichung, TW;
Chen-Chiu Hsue, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielectric layer is disposed on the conductive patterns and the insulator layer, wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 Å to 4000 Å.