Taipei, Taiwan

Ming-Hui Wu

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Hui Wu. Retrieved from https://idiyas.com/inventor/ming-hui-wu-td4go7mw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ming-Hui Wu

Introduction

Ming-Hui Wu is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method that addresses critical challenges in gate length bias.

Latest Patents

Ming-Hui Wu holds a patent titled "Method for reducing gate length bias." This patent discloses a method that utilizes an additional blanket ion implantation process to adjust the etching property of the undoped conductive layer. The invention effectively reduces the gate length bias between NMOS and PMOS gate electrodes by employing a polysilicon layer to form these electrodes.

Career Highlights

Ming-Hui Wu is currently associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to focus on advancing technologies that enhance the performance and reliability of semiconductor devices.

Collaborations

Ming-Hui Wu has collaborated with talented coworkers such as Kai-Jen Ko and Yuan-Li Tsai. Their combined expertise has contributed to the successful development of innovative solutions in their field.

Conclusion

Ming-Hui Wu's contributions to semiconductor technology, particularly through his patent on reducing gate length bias, highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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