The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Apr. 08, 2002
Applicant:
Inventors:
Kai-Jen Ko, Hsin-Chu, TW;
Yuan-Li Tsai, Taipei, TW;
Ming-Hui Wu, Taipei, TW;
Steven Huang, Hsin-Chu, TW;
Ching-Chun Hwang, Taichung, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18236 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18236 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method for reducing a gate length bias is disclosed. The method utilizes an additional blanket ion implantation process to adjust the etching property of the undoped conductive layer. According to the present invention, a polysilicon layer is used to form NMOS and PMOS gate electrodes so that the gate length bias between the NMOS gate electrodes and the PMOS gate electrodes can be effectively reduced.