This inventor holds 3 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2006.
Location History:
- Ilam, TW (2003)
- Ilan, TW (2005 - 2006)
Company Filing History:
Years Active: 2003-2006
Title: Innovations by Ming-Hua Yoo in CMP Technology
Introduction
Ming-Hua Yoo is a notable inventor based in Ilan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in chemical mechanical polishing (CMP) processes. With a total of 3 patents, his work addresses critical challenges in the industry.
Latest Patents
One of Ming-Hua Yoo's latest patents focuses on a CMP process that eliminates residual oxide layers and slurry particles. This innovation addresses two common issues in CMP: the tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. By adding TMAH or TBAH to the slurry, the surface being polished becomes hydrophobic. This hydrophobic state prevents a residual layer of oxide from remaining on the surface after CMP. Additionally, any slurry abrasive particles that do cling to the freshly polished surface can be easily removed through a simple rinse or buffing. Alternatively, the CMP process can be executed in three stages: conventional CMP, polishing in a TMAH or TBAH solution, and finally, a gentle rinse or buffing.
Career Highlights
Ming-Hua Yoo is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor technologies. His expertise in CMP processes has positioned him as a valuable asset in the industry.
Collaborations
Ming-Hua Yoo has collaborated with several talented individuals, including Ying-Lang Wang and Yi-Lung Cheng. These collaborations have further enhanced the development of innovative solutions in semiconductor manufacturing.
Conclusion
Ming-Hua Yoo's contributions to CMP technology demonstrate his commitment to solving complex problems in semiconductor manufacturing. His innovative approaches have the potential to significantly improve the efficiency and effectiveness of CMP processes.