Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Hua Yoo

Chi-Wen Liu

Ying-Lang Wang

Shih-Chi Lin

Yi-Lung Cheng

Wen-Kung Cheng

Jiann-Kwang Wang

Two problems seen in CMP as currently executed are a tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. These problems have been solved by adding to the slurry a quantity of TMAH or TBAH. This has the effect of rendering the surface being polished hydrophobic. In that state a residual layer of oxide will not be left on the surface at the conclusion of CMP. Nor will many slurry abrasive particles remain cling to the freshly polished surface. Those that do are readily removed by a simple rinse or buffing. As an alternative, the CMP process may be performed in three stages&#x2014;first convention CMP, then polishing in a solution of TMAH or TBAH, and finally a gentle rinse or buffing.

CMP process leaving no residual oxide layer or slurry particles

Two problems seen in CMP as currently executed are a tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. These problems have been solved by adding to the slurry a quantity of TMAH or TBAH. This has the effect of rendering the surface being polished hydrophobic. In that state a residual layer of oxide will not be left on the surface at the conclusion of CMP. Nor will many slurry abrasive particles remain cling to the freshly polished surface. Those that do are readily removed by a simple rinse or buffing. As an alternative, the CMP process may be performed in three stages&mdash;first convention CMP, then polishing in a solution of TMAH or TBAH, and finally a gentle rinse or buffing.

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Ilan, Taiwan

Ming-Hua Yoo