Min Zhang

Title: Min Zhang: Innovator in Memory Device Technology

Introduction

Min Zhang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technology, holding 2 patents that showcase his innovative approach to multi-pass programming in memory devices.

Latest Patents

One of Min Zhang's latest patents is titled "Negative gate stress operation in multi-pass programming and memory device thereof." This patent describes a memory device that includes an array of memory cells arranged in multiple rows, with a plurality of word lines coupled to these rows. The device features a peripheral circuit designed to perform multi-pass programming on a selected row of memory cells. This programming involves several passes, each consisting of a programming operation followed by a verify operation. Notably, during the non-last programming pass, the peripheral circuit executes a negative gate stress (NGS) operation on each memory cell in the selected row between the programming and verify operations. Additionally, it performs an NGS operation on memory cells in an unselected row adjacent to the selected word line.

Career Highlights

Min Zhang has worked with notable companies in the technology sector, including Yangtze Memory Technologies Co., Ltd. and CRRC Yangtze Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in memory technology.

Collaborations

Throughout his career, Min Zhang has collaborated with talented individuals such as Zhipeng Dong and Haibo Li. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Min Zhang is a distinguished inventor whose work in memory device technology has led to significant advancements in the field. His innovative patents and collaborations reflect his commitment to pushing the boundaries of technology.