Yangtze Memory Technologies Co., Ltd.

State Grid Corporation of China

Crrc Yangtze Co., Ltd.

Hubei Electric Power Transmission&distribution Engineering Co.

Min Zhang

Haibo Li

Zhipeng Dong

Ming Wang

Fengwei Liu

Li Xiang

Lei Wang

Ling Chu

Yong Li

Chuanfeng Jing

Haiwen Fang

Haibin Hu

Zhengyun Liu

Lin Shu

Guiqiong Luo

Ming Xia

Bin Xie

Sheng Huagn

Xiaoping Jin

Ying Yang

Chunxu Sun

Pengchao Ma

Dong Wu

Jinge Li

Chen Zeng

Wenmin Wang

Bin Ji

Yuanxin He

Zhenchang Shi

Wenhuan Xiong

Wenkai Yi

Jianhua Gao

Haibo Zhu

A memory device is provided. The memory device includes an array of memory cells arranged in a plurality of rows, a plurality of word lines respectively coupled to the plurality of rows of the memory cells; and a peripheral circuit coupled to the word lines and configured to perform multi-pass programming on a selected row of memory cells coupled to a selected word line of the word lines. The multi-pass programming includes a plurality of programming passes, each of the programming passes having a programming operation and a verify operation. To perform the multi-pass programming, the peripheral circuit is configured to, in a non-last programming pass, perform a negative gate stress (NGS) operation on each memory cell in the selected row of memory cells between the programming operation and the verify operation.

Negative gate stress operation in multi-pass programming and memory device thereof

A memory device is provided. The memory device includes an array of memory cells arranged, a plurality of word lines, and a peripheral circuit configured to perform multi-pass programming on a selected row of memory cells coupled to a selected word line. The multi-pass programming includes a plurality of programming passes. Each of the programming passes includes a programming operation and a verify operation. To perform the multi-pass programming, the peripheral circuit is configured to, in a non-last programming pass of memory cells, perform a negative gate stress (NGS) operation on a memory cell in the selected row of memory cells between the programming operation and the verify operation; and at a same time, perform a NGS operation on a memory cell in an unselected row of memory cells coupled to an unselected word line of the word lines. The unselected word line is adjacent to the selected word line.

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Wuhan, China

Min Zhang