Mikio Ikeda

Title: Mikio Ikeda: Innovator in Field Effect Thin-Film Transistors

Introduction

Mikio Ikeda is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of electronics, particularly in the development of field effect thin-film transistors. With a total of 3 patents to his name, his work has had a considerable impact on memory cell technology.

Latest Patents

Ikeda's latest patents include advancements in field effect thin-film transistors designed for use in miniaturized complete CMOS SRAMs. His innovations focus on achieving stable reading and writing operations while reducing power consumption. The transistors he developed are characterized by an active layer and a gate electrode, with a channel region made of monocrystal silicon that minimizes grain boundaries. These transistors demonstrate impressive performance metrics, including an ON current of 0.25 µA/µm and an OFF current of 15 fA/µm, making them suitable for p-channel MOS transistors in memory cells.

Career Highlights

Throughout his career, Ikeda has worked with prominent companies such as Mitsubishi Electric Corporation and Ryoden Semiconductor System Engineering Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Ikeda has collaborated with notable colleagues, including Hisayuki Nishimura and Kazuyuki Sugahara. These partnerships have fostered a collaborative environment that has led to further advancements in their respective fields.

Conclusion

Mikio Ikeda's contributions to the field of field effect thin-film transistors have established him as a key figure in semiconductor innovation. His patents reflect a commitment to enhancing technology while addressing power consumption challenges.