Murphy, TX, United States of America

Mike Watson Goodwin


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Mike Watson Goodwin: Innovator in Semiconductor Technology

Introduction

Mike Watson Goodwin is a notable inventor based in Murphy, Texas. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances channel mobility in semiconductor devices.

Latest Patents

Goodwin holds a patent titled "Methods and devices employing metal layers in gates to introduce channel strain." This invention involves the fabrication of a semiconductor device that incorporates a metal stress-inducing layer. This layer is designed to facilitate channel mobility, which is crucial for the performance of semiconductor devices. The process includes forming a gate dielectric layer over a semiconductor substrate, followed by the application of the metal stress-inducing layer. This layer is specifically engineered to yield a selected amount and type of stress, ultimately improving the efficiency of the device.

Career Highlights

Mike Watson Goodwin is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to be at the forefront of technological advancements in this field.

Collaborations

Goodwin has collaborated with talented individuals such as Zhibo Zhang and Cloves Rinn Cleavelin. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Mike Watson Goodwin's contributions to semiconductor technology through his patent and work at Texas Instruments Corporation highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor devices.

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