Texas Instruments Corporation

Mike Watson Goodwin

Satyavolu Srinivas Papa Rao

Michael Francis Pas

Stephanie Watts Butler

Cloves Rinn Cleavelin

Zhibo Zhang

A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a semiconductor substrate. The metal stress inducing layer is formed over the gate dielectric layer. The metal stress inducing layer has a selected conductivity type and is formed and composed to yield a select stress amount and type. A gate layer, such as a polysilicon layer, is formed over the metal stress inducing layer. The gate layer and the metal stress inducing layer are patterned to define gate structures.

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Mike Watson Goodwin