Michael J Mehl

Title: Michael J Mehl: Innovator in Semiconductor Materials

Introduction

Michael J Mehl is a prominent inventor based in Davidsonville, MD (US), known for his significant contributions to the field of semiconductor materials. With a total of three patents to his name, he has made notable advancements in the growth of indium nitride (InN) and its alloys.

Latest Patents

One of his latest patents is titled "Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AlN at low temperatures." This patent describes a method for growing InN materials by utilizing a pulsed growth method at temperatures lower than 300°C. The invention also details a material comprising InN in a face-centered cubic lattice crystalline structure with an NaCl type phase. Another significant patent is "Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN." This patent outlines a method for growing InN, GaN, and AlN materials, which involves the alternate growth of GaN and either InN or AlN to produce films of InGaN, AlGaN, AlInN, or AlInGaN.

Career Highlights

Michael J Mehl works for the United States Navy, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the understanding and application of InN materials in various technological fields.

Collaborations

Throughout his career, Michael has collaborated with notable colleagues, including Neeraj Nepal and Charles R Eddy, Jr. These collaborations have contributed to the innovative research and development of semiconductor materials.

Conclusion

Michael J Mehl's contributions to the field of semiconductor materials through his patents and collaborations highlight his role as a key innovator. His work continues to influence advancements in technology and materials science.