The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Dec. 16, 2014
Applicants:
Neeraj Nepal, Woodbridge, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Nadeemmullah A. Mahadik, Springfield, VA (US);
Syed B. Qadri, Fairfax Station, VA (US);
Michael J. Mehl, Davidsonville, MD (US);
Inventors:
Neeraj Nepal, Woodbridge, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Nadeemmullah A. Mahadik, Springfield, VA (US);
Syed B. Qadri, Fairfax Station, VA (US);
Michael J. Mehl, Davidsonville, MD (US);
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02661 (2013.01); H01L 29/2003 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01);
Abstract
Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InGaN, AlGaN, AlInN, or AlInGaN.