The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Sep. 07, 2017
Applicant:
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Inventors:
Neeraj Nepal, Woodbridge, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Nadeemullah A. Mahadik, Springfield, VA (US);
Syed B. Qadri, Fairfax Station, VA (US);
Michael J. Mehl, Davidsonville, MD (US);
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); C30B 25/02 (2006.01); C30B 25/20 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02661 (2013.01); H01L 29/2003 (2013.01); C30B 25/02 (2013.01); C30B 25/205 (2013.01); C30B 29/38 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01);
Abstract
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.