USA As Represented by Secretary of the Navy

Michael J Mehl

Syed B Qadri

Charles R Eddy, Jr

Neeraj Nepal

Nadeemmullah A Mahadik

Nadeemullah A Mahadik

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300&#xb0; C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InGaN, AlGaN, AlInN, or AlInGaN.

Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures

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Davidsonville, MD, United States of America

Michael J Mehl