Michael Finken

This inventor holds 5 USPTO granted patents and 1 EPO patent. Top assignees: Advanced Micro Devices Corporation, Globalfoundries Inc.. Active years: 2010-2013.

USPTO Granted Patents = 5

% Patents Active = 80.0

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 8(Granted Patents)

Company Filing History:

4 out of 13,151

Advanced Micro Devices Corporation

Years Active: 2010-2013

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5 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8546274 - Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material (2013-10-01),

2. 8034726 - Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials (2011-10-11),

3. 7994072 - Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device (2011-08-09),

4. 7875561 - Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material (2011-01-25),

5. 7858531 - Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region (2010-12-28),

Title: Michael Finken: Innovator in Semiconductor Technology

Introduction

Michael Finken is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and production yield of semiconductor devices through innovative materials and structures.

Latest Patents

Finken's latest patents include groundbreaking advancements in interlayer dielectric materials for semiconductor devices. One of his notable inventions is a highly stressed dielectric material that is deposited in a conformal manner, addressing deposition constraints caused by the surface topography of highly scaled semiconductor devices. This invention enhances overall performance without increasing the likelihood of deposition-related irregularities. Another significant patent involves a doublet structure of stressed materials, which improves device performance while minimizing undesired influences from additional stress-inducing layers.

Career Highlights

Throughout his career, Michael Finken has worked with leading companies in the semiconductor industry, including Advanced Micro Devices Corporation and Globalfoundries Inc. His expertise and innovative approach have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Finken has collaborated with notable professionals in the field, including Joerg Hohage and Ralf Richter. These collaborations have contributed to the advancement of semiconductor technology and the successful implementation of his patented inventions.

Conclusion

Michael Finken's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative approaches continue to enhance the performance and reliability of semiconductor devices.