The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jan. 22, 2008
Ralf Richter, Dresden, DE;
Joerg Hohage, Dresden, DE;
Michael Finken, Dresden, DE;
Jana Schlott, Wachau, DE;
Ralf Richter, Dresden, DE;
Joerg Hohage, Dresden, DE;
Michael Finken, Dresden, DE;
Jana Schlott, Wachau, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising at least one transistor element. An etch stop layer is formed over the transistor element. A stressed first dielectric layer is formed over the etch stop layer. A protective layer adapted to reduce an intrusion of moisture into the first dielectric layer is formed over the first dielectric layer. At least one electrical connection to the transistor element is formed. At least a portion of the protective layer remains over the first dielectric layer after completion of the formation of the at least one electrical connection.