Hsinchu, Taiwan

Meng-Hsien Lin

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012-2024

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3 patents (USPTO):Explore Patents

Title: Discovering the Innovations of Inventor Meng-Hsien Lin

Introduction

Meng-Hsien Lin, a talented inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of three patents, Lin has revolutionized methods for creating high-performance capacitor structures. His work not only showcases his innovative spirit but also highlights the importance of collaboration in the realm of invention.

Latest Patents

Among Meng-Hsien Lin's most notable patents is the "High capacitance MIM device with self-aligned spacer." This patent outlines a sophisticated metal-insulator-metal (MIM) capacitor structure, which features lower interconnects positioned within a dielectric base over a substrate. The intricate design includes a first dielectric layer with defined openings, a lower electrode, a capacitor dielectric, and an upper electrode, all of which are meticulously arranged. Additionally, a unique spacer along the outermost sidewalls optimally aligns with the lower electrode, thus enhancing the device's performance.

Another patent from Lin, which closely relates to the first, provides a comprehensive method for forming a capacitor structure. This method begins with the formation of a capacitor dielectric layer over a lower electrode, followed by the creation of an upper electrode layer. The innovative process involves specific etching techniques to define the upper electrode and expose parts of the dielectric layer, facilitating the overall construction of a high-capacitance device.

Career Highlights

Throughout his career, Meng-Hsien Lin has worked with prestigious organizations that have shaped his innovative capabilities. He has been a vital part of Taiwan Semiconductor Manufacturing Company Limited and National Tsing Hua University. His experience in these environments has allowed him to refine his skills and contribute significantly to advancements in semiconductor technology.

Collaborations

Lin has collaborated with distinguished colleagues, including Ching-Sheng Chu and Dun-Nian Yaung. Their teamwork highlights the collaborative nature of innovation, where sharing knowledge and expertise leads to groundbreaking inventions. Such partnerships often serve as a catalyst for creativity within the technology sector.

Conclusion

In conclusion, Meng-Hsien Lin stands out as a prominent inventor whose work in the semiconductor field is both innovative and impactful. With multiple patents to his name, he has established himself as a leader in creating advanced capacitor structures. As technology continues to evolve, Lin's contributions will undoubtedly play a crucial role in shaping the future of semiconductor applications.

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