The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8309185 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 13, 2012

Filed:

May. 04, 2010
Applicants:

Meng-hsien Lin, Hsinchu, TW;

Hung-ying Chen, Yunlin, TW;

Shang-jr Gwo, Hsin-Chu, TW;

Inventors:

Meng-Hsien Lin, Hsinchu, TW;

Hung-Ying Chen, Yunlin, TW;

Shang-Jr Gwo, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); B05D 3/00 (2006.01); B05D 1/38 (2006.01); B05D 1/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a method for forming a nanoparticle film, which comprises the steps of: preparing a nanoparticle solution, which comprises a solvent and supersaturated nanoparticles with surface ligand molecules; and dip coating a substrate to the nanoparticle solutions to form a first monolayer of the nanoparticles on the substrate, the first monolayer and repeatedly formed monolayers on top of the first monolayer constructing the nanoparticle film. Another embodiment of the present invention provides a nanoparticle film, comprising a first monolayer consisted of a two-dimensional nanoparticles array that are near-field coupled with each other to have tunable plasmonic properties by changing the number of stacked monolayers.


Find Patent Forward Citations

Lin, Meng-Hsien. (2012). Nanoparticle film and forming method and application thereof (U.S. Patent No. 8309185). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8309185

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