Hillsboro, OR, United States of America

Megan Beck

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Megan Beck. Retrieved from https://idiyas.com/inventor/megan-beck-qw6m417x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Megan Beck - Innovator in Integrated Circuit Structures

Introduction

Megan Beck is an inventor based in Hillsboro, OR (US). She is known for her innovative work in the field of integrated circuit structures. Although she currently holds no granted patents, her contributions to technology are noteworthy.

Latest Patent Applications

Megan Beck's latest patent application is titled "FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES." This application describes gate-all-around integrated circuit structures that feature pre-spacer-deposition cut gates. The integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first gate stack is positioned over the first vertical arrangement, while a second gate stack is over the second vertical arrangement. Notably, an end of the second gate stack is spaced apart from the end of the first gate stack by a gap. Additionally, the structure includes a dielectric component that provides gate spacers along the sidewalls of both gate stacks, with a third portion filling the gap and being contiguous with the first and second portions.

Conclusion

Megan Beck is an emerging inventor whose work in integrated circuit structures showcases her innovative spirit and dedication to advancing technology. Her latest patent application reflects her commitment to developing cutting-edge solutions in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…