Dresden, Germany

Maximilian W Lederer

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Globalfoundries U.S. Inc.. Active years: 2024.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Maximilian W Lederer: Innovator in Memory Cell Technology

Introduction

Maximilian W Lederer is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of memory cell technology, particularly through his innovative patent that enhances the performance and reliability of memory cells.

Latest Patents

Maximilian holds a patent titled "Memory cell including polarization retention member(s) including antiferroelectric layer over ferroelectric layer." This invention focuses on memory cells that incorporate various capacitor structures, including a polarization retention member. The design features an antiferroelectric layer positioned over a ferroelectric layer, allowing for customization of the hysteresis loop shape and the coercive electric field necessary for polarization changes. The memory cells, which can include FeRAMs or FeFETs, demonstrate a lower coercive electric field requirement compared to traditional ferroelectric memory cells, thereby enhancing reliability and facilitating integration into existing integrated circuit fabrication processes.

Career Highlights

Maximilian W Lederer is currently employed at Globalfoundries U.S. Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His work has positioned him as a key player in advancing memory cell technology.

Collaborations

Maximilian collaborates with notable colleagues, including Tarek Ali and Konstantin H J Mertens, who contribute to the innovative projects at Globalfoundries.

Conclusion

Maximilian W Lederer is a distinguished inventor whose work in memory cell technology is paving the way for advancements in the semiconductor industry. His innovative patent reflects his commitment to enhancing the performance and reliability of memory cells, making a significant impact in the field.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…