Eindhoven, Netherlands

Matthias Jj Theunissen

This inventor holds 2 USPTO granted patents. Top assignee: U.S. Philips Corporation. Active years: 1991-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matthias Jj Theunissen. Retrieved from https://idiyas.com/inventor/matthias-jj-theunissen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1991-1999

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2 patents (USPTO):Explore Patents

Title: Matthias Jj Theunissen: Innovator in Semiconductor Manufacturing

Introduction

Matthias Jj Theunissen is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of semiconductor manufacturing, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include a method for the manufacture of a semiconductor device with selectively deposited materials. This method involves providing a layer of insulating material and a layer of polycrystalline silicon on a monocrystalline wafer. A window is created in the polycrystalline silicon layer, followed by the formation of a protective layer on the window's wall. The insulating material is then removed within the window and below the edge of the polycrystalline silicon layer. Silicon is selectively grown on the exposed mono- and polycrystalline silicon from a vapor containing chlorine and silicon at low pressure. Prior to this selective deposition, the silicon wafer is cleaned through heating in a hydrogen atmosphere, ensuring a strong connection between the deposited monocrystalline silicon and the polycrystalline silicon.

Another patent focuses on a method of manufacturing a semiconductor device where a polycrystalline or amorphous silicon oxide layer is recrystallized through heat treatment. This process involves concentrating heat at specific openings in the silicon oxide layer, utilizing a second silicon oxide layer and a second polycrystalline silicon layer to achieve effective recrystallization.

Career Highlights

Matthias Jj Theunissen is associated with U.S. Philips Corporation, where he has contributed to advancements in semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

He has collaborated with notable coworkers such as Wiebe B De Boer and Armand Pruijmboom, further enriching his contributions to the field.

Conclusion

Matthias Jj Theunissen's innovative methods in semiconductor manufacturing reflect his expertise and commitment to advancing technology. His patents are a testament to his significant role in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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