The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 1991

Filed:

Feb. 05, 1991
Applicant:
Inventors:

Matthias J Theunissen, Eindhoven, NL;

Johanna M Mulder, Eindhoven, NL;

Jan Haisma, Eindhoven, NL;

Wilhelmus P Rutten, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437109 ; 437173 ; 437174 ; 437 89 ; 437973 ; 148D / ; 148D / ;
Abstract

The invention relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon oxide layer 3, which is provided on a silicon oxide layer 2 on a monocrystalline silicon substrate 1 and which is in contact with the silicon substrate 1 via an opening 4 in the silicon layer 2, is recrystallized by means of a heat treatment in the presence of means for concentrating the heat at the opening 4. In a simple and inexpensive manner, these means consist of a second silicon oxide layer 5 and a second polycrystalline silicon layer 6, the second silicon oxide layer 5 having a thickness at the openings 4 which is smaller than that of the rest of the layer 5.


Find Patent Forward Citations

Theunissen, Matthias. (1991). Method of manufacturing a semiconductor device (U.S. Patent No. 5057452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5057452

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