The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Oct. 21, 1996
Wiebe B De Boer, Eindhoven, NL;
Matthias JJ. Theunissen, Eindhoven, NL;
Armand Pruijmboom, Albuquerque, NM (US);
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of a manufacturing a semiconductor device whereby a layer of insulating material and a layer of polycrystalline silicon are provided on a surface of a monocrystalline wafer. A window is then provided in the layer of polycrystalline silicon and a protective layer is formed on the wall of this window. Then the layer of insulating material is removed within the window and below an edge of the layer of polycrystalline silicon adjoining the window. Subsequently, silicon is selectively grown on the mono- and polycrystalline silicon exposed in and adjacent the window from a vapor comprising chlorine as well as silicon at low pressure. The silicon wafer is cleaned before the selective deposition through heating in an atmosphere comprising hydrogen at a pressure of at least 1 atmosphere. This cleaning safeguards that the deposited monocrystalline silicon will always be connected to the layer of polycrystalline silicon by the deposited polycrystalline silicon.