Dresden, Germany

Matthias Förster

This inventor holds 2 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matthias Förster. Retrieved from https://idiyas.com/inventor/matthias-fandoumlrster

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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2 patents (USPTO):Explore Patents

Title: Innovations of Matthias Förster in Semiconductor Technology

Introduction

Matthias Förster is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of trench capacitors. With a total of 2 patents to his name, Förster's work has advanced the efficiency and performance of semiconductor memory devices.

Latest Patents

Förster's latest patents include a method for fabricating a trench capacitor for a semiconductor memory. This innovative method involves forming a masking layer in a trench disposed in a substrate. Nanocrystallites are deposited on the masking layer to pattern it. Microtrenches are then etched into the substrate in the lower region of the trench by the patterned masking layer, resulting in a roughened trench sidewall. This design allows the outer capacitor electrode to have a larger surface area, thereby increasing the capacitance of the trench capacitor. Another patent focuses on a method for fabricating a trench capacitor, which includes providing a silicon substrate and forming a trench with a lower region and surface. A doped layer is formed in the silicon substrate in the lower region of the trench, and a roughened silicon layer with grains ranging from 10 to 100 nm is produced. A dielectric intermediate layer is applied on this roughened silicon layer, and the trench is filled with a doped layer.

Career Highlights

Matthias Förster is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has positioned him as a key player in the development of advanced semiconductor technologies. His innovative approaches have contributed to the company's reputation for excellence in the industry.

Collaborations

Förster collaborates with talented colleagues, including Anja Morgenschweis and Jörn Lützen. Their combined expertise fosters a creative environment that drives innovation in semiconductor technology.

Conclusion

Matthias Förster's contributions to semiconductor technology through his patents and work at Infineon Technologies AG highlight his role as a significant inventor in the field. His innovative methods for fabricating trench capacitors are paving the way for advancements in semiconductor memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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