The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 20, 2001
Applicant:
Inventors:
Matthias Förster, Dresden, DE;
Jörn Lützen, Dresden, DE;
Martin Gutsche, Dorfen, DE;
Anja Morgenschweis, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A method for fabricating a trench capacitor, that includes steps of: providing a silicon substrate; forming a trench, having a lower region and a surface, in the silicon substrate; and forming a doped layer in the silicon substrate in the lower region of the trench. In addition, a roughened silicon layer that has silicon grains with a diameter ranging from essentially 10 to 100 nm is produced in the lower region of the trench. A dielectric intermediate layer is applied on the roughened silicon layer, and the trench is filled with a doped layer.