The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Sep. 04, 2002
Applicant:
Inventors:
Matthias Förster, Dresden, DE;
Kristin Schupke, Dresden, DE;
Anja Morgenschweis, Dresden, DE;
Anett Moll, Dresden, DE;
Jens-Uwe Sachse, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method for fabricating a trench capacitor for a semiconductor memory includes forming a masking layer in a trench that is disposed in a substrate. Nanocrystallites, which are used to pattern the masking layer, are deposited on the masking layer. Microtrenches are etched into the substrate in a lower region of the trench by the patterned masking layer. The microtrenches form a roughened trench sidewall. As a result, the outer capacitor electrode is formed with a larger surface area, allowing the trench capacitor to have a higher capacitance.