Dresden, Germany

Anett Moll

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anett Moll. Retrieved from https://idiyas.com/inventor/anett-moll

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Anett Moll: Innovator in Semiconductor Technology

Introduction

Anett Moll is a notable inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the fabrication of trench capacitors. Her innovative methods have the potential to enhance the performance of semiconductor memory devices.

Latest Patents

Anett Moll holds a patent for a "Method for fabricating a trench capacitor for a semiconductor memory." This method involves forming a masking layer in a trench within a substrate. Nanocrystallites are deposited on the masking layer to pattern it. Microtrenches are then etched into the substrate in the lower region of the trench by the patterned masking layer. This process results in a roughened trench sidewall, which allows the outer capacitor electrode to have a larger surface area, ultimately increasing the capacitance of the trench capacitor.

Career Highlights

Anett Moll is currently employed at Infineon Technologies AG, where she continues to work on advancing semiconductor technologies. Her expertise in this area has positioned her as a valuable asset to her team and the company.

Collaborations

Anett collaborates with talented colleagues, including Matthias Förster and Kristin Schupke. Their combined efforts contribute to the innovative projects at Infineon Technologies AG.

Conclusion

Anett Moll's work in semiconductor technology exemplifies the impact of innovative thinking in the field. Her patent for fabricating trench capacitors showcases her commitment to enhancing semiconductor memory performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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