Matthew S S Thorum

Title: Innovations by Matthew S S Thorum

Introduction

Matthew S S Thorum is an accomplished inventor based in Boise, ID (US). He has made significant contributions to the field of memory technology, particularly in the development of vertically stacked memory cells. His innovative work has led to advancements in the efficiency and performance of memory systems.

Latest Patents

Matthew holds a patent for "Multiple, alternating epitaxial silicon." This patent describes systems, methods, and apparatus for an array of vertically stacked memory cells that feature horizontally oriented access devices and storage nodes. The technology focuses on utilizing multiple, alternating epitaxial silicon in horizontal access devices within vertical three-dimensional (3D) memory structures. The design includes horizontally oriented access devices with first and second source/drain regions separated by epitaxially grown, single crystalline silicon (Si) channel regions. Additionally, the access lines connect to gates that fully surround the channel regions, forming gate all around (GAA) structures, with vertical digit lines coupled to the first source/drain regions.

Career Highlights

Matthew is currently employed at Micron Technology Incorporated, a leading company in memory and storage solutions. His work at Micron has allowed him to collaborate with other talented professionals in the field, enhancing the company's innovative capabilities.

Collaborations

One of his notable coworkers is John F Kaeding, with whom he has likely shared insights and expertise in their respective projects.

Conclusion

Matthew S S Thorum's contributions to memory technology through his patent and work at Micron Technology Incorporated highlight his role as a key innovator in the industry. His advancements in vertically stacked memory cells are paving the way for future developments in memory systems.